Study of waveguide absorption in InGaAs ”quantum well-dots” heterostructures

Electronic states in a novel type of quantum-size heterostructures referred to as InGaAs quantum well-dots (QWDs) were experimentally studied using absorption in stripe waveguides of different lengths based on a single, double, five, and ten QWD layers. The value of the modal absorption was measured...

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Bibliographic Details
Published in:Nano-Structures & Nano-Objects 2021-02, Vol.25, p.100628, Article 100628
Main Authors: Kharchenko, A.A., Nadtochiy, A.M., Mintairov, S.A., Shernyakov, Y.M., Serin, A.A., Gordeev, N.Y., Maximov, M.V., Zhukov, A.E.
Format: Article
Language:English
Subjects:
InGaAs Heterostructures
Modal absorption
Optical polarization
Quantum well-dots
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Summary:Electronic states in a novel type of quantum-size heterostructures referred to as InGaAs quantum well-dots (QWDs) were experimentally studied using absorption in stripe waveguides of different lengths based on a single, double, five, and ten QWD layers. The value of the modal absorption was measured to be 70 cm−1 and 90 cm−1 for ground-state transition and high-energy one, respectively. The structure of electronic states in the QWDs is also analyzed by polarization-resolved waveguide absorption and the dependence of a polarization degree on the chip length is discussed. TM polarization of the heavy-hole-based optical transition photoresponse observed in the long waveguides is attributed to the light depolarization due to the scattering on the QWD heterointerfaces.
ISSN:2352-507X
DOI:10.1016/j.nanoso.2020.100628