The quantum efficiency of photo-charge generation in a-Se avalanche photodetectors

The quantum efficiency of photo-charge generation and avalanche multiplication in amorphous selenium (a-Se) photodetectors were measured over considerable ranges of photoexcitation wavelengths (420–600 nm) and electric fields (10–112.5 V/μm) for several different a-Se target thicknesses (8–35 μm). A...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2006-11, Vol.567 (1), p.93-95
Main Authors: Reznik, A., Lui, B.J.M., Ohkawa, Y., Matsubara, T., Miyakawa, K., Kubota, M., Tanioka, K., Kawai, T., Zhao, W., Rowlands, J.A.
Format: Article
Language:English
Subjects:
Avalanche a-Se
Delocalization of states
Onsager dissociation
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Summary:The quantum efficiency of photo-charge generation and avalanche multiplication in amorphous selenium (a-Se) photodetectors were measured over considerable ranges of photoexcitation wavelengths (420–600 nm) and electric fields (10–112.5 V/μm) for several different a-Se target thicknesses (8–35 μm). An avalanche multiplication factor of 1000 is shown for a 35 μm thick a-Se layer at an electric field of 98 V/μm. The experimental results on quantum efficiency can be explained by the Onsager theory of electron–hole pair dissociation in conjunction with an electric field-induced delocalization of states.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2006.05.116