TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2009-06, Vol.604 (1), p.254-257
• Main Authors: Luukka, P., Härkönen, J., Mäenpää, T., Betchart, B., Czellar, S., Demina, R., Furgeri, A., Gotra, Y., Frey, M., Hartmann, F., Korjenevski, S., Kortelainen, M.J., Lampén, T., Ledermann, B., Lemaitre, V., Liamsuwan, T., Militaru, O., Moilanen, H., Simonis, H.J., Spiegel, L., Tuominen, E., Tuominiemi, J., Tuovinen, E.
• Format: Article
• Language: English
• Subjects: Beam test; Double junction; Magnetic Czochralski silicon; Transient current technique
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2009.01.071

Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 6 × 10 14 1 MeV n eq / cm 2 fluence. In the beam test a signal-to-noise ( S/ N) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a S/ N ratio of 20 for the sensors irradiated to the fluences of 1 × 10 14 1 and 5 × 10 14 1 MeV n eq / cm 2 .