A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics

The present work describes current–voltage ( I– V) characteristics of radiation detector structures based on semi-insulating (SI) GaAs obtained with new types of metallizations used to form quasi-ohmic contacts. Three different metals (In, Gd and Mg) having lower work function in comparison with the...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2009-08, Vol.607 (1), p.132-134
Main Authors: Dubecký, František, Zaťko, Bohumír, Hubík, Pavel, Gombia, Enos, Boháček, Pavol, Huran, Jozef, Sekáčová, M.
Format: Article
Language:English
Subjects:
GaAs
Metal–semiconductor contact
Schottky barrier
Semi-insulating
Work function
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Summary:The present work describes current–voltage ( I– V) characteristics of radiation detector structures based on semi-insulating (SI) GaAs obtained with new types of metallizations used to form quasi-ohmic contacts. Three different metals (In, Gd and Mg) having lower work function in comparison with the standard AuGeNi eutectic alloy, were used. These metals are expected to form a band bending at the M–S interface which should give rise to a blocking barrier for holes (“minority” carriers in SI GaAs). Such contacts, which could effectively replace standard alloyed N + “ohmic” contact, show an unusual electrical charge transport as deduced from the measured I– V characteristics. Pulse-height spectra of 241Am radionuclide source detected by the structures are also reported.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2009.03.191