Characterization of a prototype matrix of Silicon PhotoMultipliers

This work reports on the electrical as well as the optical characterizations of a prototype matrix of Silicon PhotoMultipliers (SiPM). The electrical test consists of the measurement of the static (breakdown voltage, quenching resistance, post-breakdown dark current) as well as the dynamic character...

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Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2009-10, Vol.610 (1), p.101-104
Main Authors: Dinu, N., Barrillon, P., Bazin, C., Belcari, N., Bisogni, M.G., Bondil-Blin, S., Boscardin, M., Chaumat, V., Collazuol, G., De La Taille, C., Del Guerra, A., Llosá, G., Marcatili, S., Melchiorri, M., Piemonte, C., Puill, V., Tarolli, A., Vagnucci, J.F., Zorzi, N.
Format: Article
Language:English
Subjects:
Dark count rate
Gain
Matrix
Photodetectors
Photon detection efficiency
Silicon PhotoMultiplier
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Summary:This work reports on the electrical as well as the optical characterizations of a prototype matrix of Silicon PhotoMultipliers (SiPM). The electrical test consists of the measurement of the static (breakdown voltage, quenching resistance, post-breakdown dark current) as well as the dynamic characteristics (gain, dark count rate). The optical test consists of the estimation of the photon detection efficiency as a function of wavelength as well as operation voltage.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2009.05.080