Room temperature particle detectors based on indium phosphide

A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High pu...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2010, Vol.612 (2), p.334-337
Main Authors: Yatskiv, R., Grym, J., Zdansky, K., Pekarek, L.
Format: Article
Language:English
Subjects:
High purity InP layers
Particle detector
Semi-insulating InP
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Summary:A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p–n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature. Better noise properties were achieved for detectors with p–n junctions due to better quality contacts on p-type layers.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2009.10.172