Epitaxial InGaAsP/InP photodiode for registration of InP scintillation

Operation of semiconductor scintillators requires optically tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially grown on the surface of an InP scintillator wafer and sensitive...

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Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2010-10, Vol.622 (1), p.113-119
Main Authors: Luryi, S., Kastalsky, A., Gouzman, M., Lifshitz, N., Semyonov, O., Stanacevic, M., Subashiev, A., Kuzminsky, V., Cheng, W., Smagin, V., Chen, Z., Abeles, J.H., Chan, W.K., Shellenbarger, Z.A.
Format: Article
Language:English
Subjects:
InGaAsP photodiodes
InP epitaxy
Semiconductor scintillator
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Summary:Operation of semiconductor scintillators requires optically tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially grown on the surface of an InP scintillator wafer and sensitive to InP luminescence. The diode is characterized by an extremely low room-temperature dark current, about 1nA/cm2 at the reverse bias of 2V. The low leakage makes possible a sensitive readout circuitry even though the diode has a large area (1×1mm2) and therefore large capacitance (50pF). Results of electrical, optical and radiation testing of the diodes are presented. Detection of individual α-particles and γ-photons is demonstrated.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2010.07.042