A Monolithic Active Pixel Sensor for ionizing radiation using a 180nm HV-SOI process

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2015-10, Vol.796, p.8-12
• Main Authors: Hemperek, Tomasz, Kishishita, Tetsuichi, Krüger, Hans, Wermes, Norbert
• Format: Article
• Language: English
• Subjects: Pixel; Radiation hard; Sensor; SOI
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2015.02.052

An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.