Design optimization of ultra-fast silicon detectors

Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simul...

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Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2015-10, Vol.796, p.141-148
Main Authors: Cartiglia, N., Arcidiacono, R., Baselga, M., Bellan, R., Boscardin, M., Cenna, F., Dalla Betta, G.F., Fernndez-Martnez, P., Ferrero, M., Flores, D., Galloway, Z., Greco, V., Hidalgo, S., Marchetto, F., Monaco, V., Obertino, M., Pancheri, L., Paternoster, G., Picerno, A., Pellegrini, G., Quirion, D., Ravera, F., Sacchi, R., Sadrozinski, H.F.-W., Seiden, A., Solano, A., Spencer, N.
Format: Article
Language:English
Subjects:
APD
Charge multiplication
Fast detector
Low gain
Silicon
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Summary:Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2015.04.025