Edge effect in ohmic contacts on high-resistivity semiconductors

Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges m...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2016-01, Vol.806, p.356-359
Main Author: Ruzin, Arie
Format: Article
Language:English
Subjects:
CdZnTe
Detector
Edge-effect
Simulation
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Summary:Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors. •Ohmic contacts were modeled on semi-intrinsic and compensated semiconductors.•Edge-effect increases the contact current by a factor of ~2 for intermediate size contacts.•In larger and smaller contacts the current increase is smaller.•In smaller contacts the E-field edge-peak decreases.•With velocity saturation the current increase is less pronounced.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2015.10.063