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Development and testing of a radiation-hard large-electrode DMAPS design in a 150 nm CMOS process
The LF-Monopix chips are depleted monolithic active pixel sensors that follow the large-electrode design approach and implement a fast synchronous read-out architecture. They are designed in a 150 nm CMOS process and make use of large voltages (>250V) and highly resistive substrates (>2kΩ⋅cm)...
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Published in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2022-10, Vol.1040, p.167224, Article 167224 |
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Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
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Online Access: | Get full text |
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Summary: | The LF-Monopix chips are depleted monolithic active pixel sensors that follow the large-electrode design approach and implement a fast synchronous read-out architecture. They are designed in a 150 nm CMOS process and make use of large voltages (>250V) and highly resistive substrates (>2kΩ⋅cm) to collect charge through drift and enhance their radiation hardness.
Samples of the first prototype (“LF-Monopix1”) with a thickness of 100μm were irradiated to assess the tolerance of the chip’s substrate and front-end circuitry to the surface and bulk damage doses expected at modern collider experiments. The device remained fully operational, with only a very small gain degradation and an increase in noise by less than 25% after a total ionizing dose of 100Mrad. Efficiency measurements in a sample exposed to a neutron fluence of 1×1015neq/cm2 showed that at least 96% of all minimum ionizing particles going through a fully depleted detector are recorded in less than 25ns. In the latest design (“LF-Monopix2”) the column length was tripled and the pixel pitch reduced by 40% with respect to its predecessor. The chip was successfully thinned down while keeping its breakdown voltage above 400V and achieving a front-end threshold dispersion of ∼100e− after tuning. |
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ISSN: | 0168-9002 1872-9576 |
DOI: | 10.1016/j.nima.2022.167224 |