Characterisation and simulation of stitched CMOS strip sensors

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2024-07, Vol.1064, p.169407, Article 169407
• Main Authors: Davis, Naomi, Arling, Jan-Hendrik, Baselga, Marta, Diehl, Leena, Dingfelder, Jochen, Gregor, Ingrid-Maria, Hauser, Marc, Hügging, Fabian, Hemperek, Tomasz, Jakobs, Karl, Karagounis, Michael, Koppenhöfer, Roland, Kröninger, Kevin, Lex, Fabian, Parzefall, Ulrich, Rodriguez, Arturo, Sari, Birkan, Sorgenfrei, Niels, Spannagel, Simon, Sperlich, Dennis, Wang, Tianyang, Weingarten, Jens, Zatocilova, Iveta
• Format: Article
• Language: English
• Subjects: CMOS; Silicon strip sensors; Stitching; Test Beam
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2024.169407

In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.