Radiation damages of InGaAs photodiodes by high-temperature electron irradiation

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2004-06, Vol.219, p.718-721
• Main Authors: Ohyama, H., Takakura, K., Nakabayashi, M., Hirao, T., Onoda, S., Kamiya, T., Simoen, E., Claeys, C., Kuboyama, S., Oka, K., Matsuda, S.
• Format: Article
• Language: English
• Subjects: 2-MeV electron; High-temperature irradiation; InGaAs photodiode; Radiation damage
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2004.01.149

Results are presented of a detailed study of the effects of high-temperature 2-MeV electron irradiation on the performance degradation of InGaAs photodiodes. The macroscopic device performance will be correlated with the radiation-induced defects, observed by DLTS. It was found that the dark current increases after irradiation, while the photo current decreases. After irradiation, one majority electron capture level with ( E c−0.37 eV) was induced in the n-InGaAs layer, while no minority hole traps were found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decrease with increasing irradiation temperature. For a 300 °C irradiation, the reduction of the photo current is only 40% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.