Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon

Currently there are extensive atomistic studies that model some characteristics of the damage buildup due to ion irradiation (e.g. L. Pelaz et al., Appl. Phys. Lett. 82 (2003) 2038–2040). Our interest is to develop a novel statistical damage buildup model for our BCA ion implant simulator (IIS) code...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2005-01, Vol.228 (1-4), p.235-239
Main Authors: Hernández-Mangas, J.M., Arias, J., Marqués, L.A., Ruiz-Bueno, A., Bailón, L.
Format: Article
Language:English
Subjects:
Computer simulation
Damage accumulation
Ion implantation
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Summary:Currently there are extensive atomistic studies that model some characteristics of the damage buildup due to ion irradiation (e.g. L. Pelaz et al., Appl. Phys. Lett. 82 (2003) 2038–2040). Our interest is to develop a novel statistical damage buildup model for our BCA ion implant simulator (IIS) code in order to extend its ranges of applicability. The model takes into account the abrupt regime of the crystal-amorphous transition. It works with different temperatures and dose-rates and also models the transition temperature. We have tested it with some projectiles (Ge, P) implanted into silicon. In this work we describe the new statistical damage accumulation model based on the modified Kinchin–Pease model. The results obtained have been compared with existing experimental results.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2004.10.050