Nanoscale modification of electronic states of HOPG by the single impact of HCI

Slow Ar8+ impact with 400eV of kinetic energy upon graphite followed by subsequent electron injection induced the transition from sp2 to sp3 hybridization, resulting in the formation of a non-conductive region at the metallic graphite surface. From the I–V characteristics measured by scanning tunnel...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2005-07, Vol.235 (1-4), p.431-437
Main Authors: Meguro, T., Yamaguchi, Y., Fukagawa, H., Takai, H., Hanano, N., Yamamoto, Y., Kobashi, K., Ishii, T.
Format: Article
Language:English
Subjects:
Diamond
Electronic states
Graphite
Highly charged ion
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Summary:Slow Ar8+ impact with 400eV of kinetic energy upon graphite followed by subsequent electron injection induced the transition from sp2 to sp3 hybridization, resulting in the formation of a non-conductive region at the metallic graphite surface. From the I–V characteristics measured by scanning tunneling spectroscopy, it was confirmed that the Ar8+ impact region showed an energy gap with ∼6eV. The impact region was found to work as an electron emitter similar to the CVD-grown poly-crystalline diamond film after the further treatment in hydrogen ambient at 600°C. It was confirmed from the Raman spectroscopic measurements that vacancies were introduced into the sp2 region by the slow Ar8+ impact, and also found that the most presumable sp3 cluster model which can explain experimental results had a defective and more planar structure from DV-Xa molecular orbital calculations.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2005.03.219