Extraction of SiN− ions from source of negative ions by cesium sputtering

We investigated the production of SiN− ions from a source of negative ions by cesium sputtering (SNICS) ion source. Currents up to 17μA were obtained by optimizing the operation parameters such as the cathode voltage, ionizer current, temperature of the cesium reservoir and fine turning the focussin...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2005-12, Vol.241 (1-4), p.885-889
Main Authors: Wang, X.M., Liu, J.R., Shao, L., Ma, K.B., Chen, H., Yu, X.K., Chu, W.K.
Format: Article
Language:English
Subjects:
SiN− ions
Source of negative ions by cesium sputtering
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Summary:We investigated the production of SiN− ions from a source of negative ions by cesium sputtering (SNICS) ion source. Currents up to 17μA were obtained by optimizing the operation parameters such as the cathode voltage, ionizer current, temperature of the cesium reservoir and fine turning the focussing system. Damage and damage annealing of low energy SiN− implanted in silicon are also studied and reported in this presentation.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2005.07.146