Ion track formation below 1MeV/u in thin films of amorphous SiO2

Only a few studies have so far been reported on ion track formation using low energy ion beams. Therefore we have performed a systematic study using different heavy ions at energies below 1MeV/u for irradiation of thin films of amorphous silicon dioxide (a-SiO2). The induced latent ion tracks were s...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2006-01, Vol.243 (1), p.119-126
Main Authors: Jensen, J., Razpet, A., Skupiński, M., Possnert, G.
Format: Article
Language:English
Subjects:
Defects
Ion tracks
Nano-pores
Silicon dioxide
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Summary:Only a few studies have so far been reported on ion track formation using low energy ion beams. Therefore we have performed a systematic study using different heavy ions at energies below 1MeV/u for irradiation of thin films of amorphous silicon dioxide (a-SiO2). The induced latent ion tracks were studied by selective chemical etching in an aqueous HF solution and the resulting pores were investigated by scanning electron microscopy. The evolution of pore diameter and etch yield were studied as a function of energy for each ion species. The track etching threshold in the electronic stopping power (dE/dx)e and specific energy was found to be approximately 1.5keV/nm and 0.04MeV/u, respectively, which is lower than previously observed. In a transition regime, 1.5keV/nm
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2005.07.226