Photoluminescence study of GaAs implanted with 100MeV 28Si ions

Damage in n-GaAs implanted with 100MeV 28Si ions has been investigated using low temperature (T∼20K) photoluminescence (PL) measurements on samples irradiated with fluences of 1016ionsm−2, 1017ionsm−2 and 1018ionsm−2, respectively and annealed at various temperatures up to 1000°C. A dominant anneali...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2006-06, Vol.247 (2), p.238-243
Main Authors: Ali, Y.P., Narsale, A.M., Arora, B.M.
Format: Article
Language:English
Subjects:
GaAs
MeV ion implantation
Photoluminescence
Radiation defects
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Summary:Damage in n-GaAs implanted with 100MeV 28Si ions has been investigated using low temperature (T∼20K) photoluminescence (PL) measurements on samples irradiated with fluences of 1016ionsm−2, 1017ionsm−2 and 1018ionsm−2, respectively and annealed at various temperatures up to 1000°C. A dominant annealing stage is seen at 650°C where the PL begins to recover. PL spectra reveal several features which vary with annealing temperature, fluence and depth. Assignments of the defect structures responsible for the emission peaks are suggested.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2006.01.067