GISAXS studies of structural modifications in ion-beam amorphized Ge

Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74Ge, from 3×1012cm−2 to 3×1016cm−2; at room- or liquid nitrogen-temperature, respectively. We have found that the micro-s...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2006-08, Vol.249 (1-2), p.114-117
Main Authors: Desnica-Franković, I.D., Dubcek, P., Desnica, U.V., Bernstorff, S., Ridgway, M.C., Glover, C.J.
Format: Article
Language:English
Subjects:
Amorphous Ge
GISAXS
Ion implantation
Nano-voids
Porosity
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Summary:Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74Ge, from 3×1012cm−2 to 3×1016cm−2; at room- or liquid nitrogen-temperature, respectively. We have found that the micro-structure in amorphous Ge, continuously and consistently evolves as a function of ion dose but differs according to the implantation temperature. In RT-samples small vacancy nanoclusters agglomerate in the end-of-range region of implanted layer even before complete amorphization. With higher doses nanoclusters increase and coalesce into nano-voids. For the highest dose, the onset of porosity is confirmed. On the other hand, in LN-implanted samples, the clustering-related signal is much weaker and evolves more slowly.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2006.03.093