MEIS study of As implantation in O or N pre-implanted Si(001)

We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(100). The vacancy-rich layers were generated by implantation at 400°C of 240keV O2+ or N2+ ions and a dose of 2.5×1016cm−2. The As dopant was introduced by implanting at 20keV at room...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2006-08, Vol.249 (1-2), p.874-877
Main Authors: Dalponte, M., Boudinov, H., Goncharova, L.V., Garfunkel, E., Gustafsson, T.
Format: Article
Language:English
Subjects:
Arsenic
Ion implantation
MEIS
Nitrogen
Oxygen
Silicon
Vacancies
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Summary:We have used medium energy ion scattering (MEIS) to study dopant (arsenic, As) behavior in vacancy-rich layers on Si(100). The vacancy-rich layers were generated by implantation at 400°C of 240keV O2+ or N2+ ions and a dose of 2.5×1016cm−2. The As dopant was introduced by implanting at 20keV at room temperature to a dose of 5×1014cm−2, followed by either rapid thermal annealing (RTA) or furnace annealing (FA). The results showed very good Si crystal quality after both thermal treatments, especially when compared to otherwise identical samples without pre-implanted O or N. Differences between the O and N pre-implanted samples were also observed, suggesting the occurrence of chemical effects in the crystal recovery and dopant diffusion processes.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2006.03.154