The As2V complex in silicon: Band-gap levels, migration and annealing

In this study, we used n+p mesa diodes where the highly arsenic doped n+ top layer was grown by molecular-beam epitaxy on top of a 5-μm thick p-type layer grown by chemical-vapour deposition. The diodes were irradiated with 2MeV electrons at room temperature and the resulting defects in the p-type r...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2006-12, Vol.253 (1-2), p.172-175
Main Authors: Nielsen, H. Kortegaard, Mesli, A., Dobaczewski, L., Nielsen, K. Bonde, Lindberg, C.E., Privitera, V., Larsen, A. Nylandsted
Format: Article
Language:English
Subjects:
As2V
Deactivation
Diffusion
DLTS
E-center
Silicon
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Summary:In this study, we used n+p mesa diodes where the highly arsenic doped n+ top layer was grown by molecular-beam epitaxy on top of a 5-μm thick p-type layer grown by chemical-vapour deposition. The diodes were irradiated with 2MeV electrons at room temperature and the resulting defects in the p-type region were studied by Laplace and standard deep-level transient spectroscopy. A new defect with an apparent energy position of 0.20eV above the valence band is shown to migrate from the n+ top layer into the p-type material where it is observed by DLTS. An annealing study shows that this defect grows in at ∼400K and disappears at ∼460K. We argue that this defect is the As2V complex, and that it is formed in the top layer when negatively charged AsV pairs, which are generated in the n+ top layer by the electron irradiation, migrate and react with the abundant and positively charged As donors. Once formed, the As2V complex diffuses into the p-type material.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2006.10.024