Elastic recoil detection (ERD) analysis of GeOx thin films

Elastic recoil detection (ERD) analysis of GeOx thin films was carried out to understand the mechanism of phase separation. Stoichiometry of the film was monitored on-line at various fluences of 100MeV Au ions. Although significant electronic sputtering of GeOx film was observed but the stoichiometr...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2008-04, Vol.266 (8), p.1697-1700
Main Authors: Batra, Y., Khan, S.A., Kabiraj, D., Kumar, S., Kanjilal, D.
Format: Article
Language:English
Subjects:
Electronic energy loss
ERDA
Germanium oxide
Ion beam irradiation
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Summary:Elastic recoil detection (ERD) analysis of GeOx thin films was carried out to understand the mechanism of phase separation. Stoichiometry of the film was monitored on-line at various fluences of 100MeV Au ions. Although significant electronic sputtering of GeOx film was observed but the stoichiometry remained almost constant up to a fluence of 3×1012ions/cm2. Structural modifications of the films after irradiation was studied by offline glancing angle X-ray diffraction (GAXRD), which showed the presence of Ge crystallites in the films. The results indicate that the phase separation does not occur because of preferential sputtering of oxygen but may occur as a result of rearrangement of Ge and O atoms within the films. The activation for rearrangement is provided by ion impact.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2007.11.034