The effect of swift heavy ion irradiation on threshold voltage, transconductance and mobility of DMOSFETs

N-channel depletion MOSFETs were irradiated with 140 MeV Si 10+ ions, 100 MeV F 8+ ions and 48 MeV Li 3+ ions in the dose range from 100 krad to 100 Mrad. The MOSFET parameters such as threshold voltage ( V TH), transconductance ( g m) and mobility of carriers ( μ) were determined by systematically...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2012-02, Vol.273, p.40-42
Main Authors: Pushpa, N., Praveen, K.C., Gnana Prakash, A.P., Naik, P.S., Tripathi, Ambuj, Gupta, S.K., Revannasiddaiah, D.
Format: Article
Language:English
Subjects:
Interface trapped charge
Mobility degradation
MOSFET
Oxide trapped charge
Threshold voltage
Transconductance
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Summary:N-channel depletion MOSFETs were irradiated with 140 MeV Si 10+ ions, 100 MeV F 8+ ions and 48 MeV Li 3+ ions in the dose range from 100 krad to 100 Mrad. The MOSFET parameters such as threshold voltage ( V TH), transconductance ( g m) and mobility of carriers ( μ) were determined by systematically studying the I– V characteristics before and after irradiation. The ion irradiated results were compared with Co-60 gamma irradiated results in the same dose range. The degradation in V TH, g m and μ was found to be more for the devices irradiated with Co-60 gamma radiation than that irradiated with swift heavy ions.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2011.07.033