Structural and optical studies of gamma irradiated N-doped 4H-SiC

In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accu...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2019-02, Vol.440, p.101-106
Main Authors: Vali, Indudhar Panduranga, Shetty, Pramoda Kumara, Mahesha, M.G., Sathe, V.G., Phase, D.M., Choudhary, R.J.
Format: Article
Language:English
Subjects:
Gamma irradiation
LOPC modes
Silicon carbide
XRD
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Summary:In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (EU) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1-Anorm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2018.12.016