Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

We report on a diode pumped passively Q-switched Nd:Gd0.64Y0.36VO4 laser with a Cr4+:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse...

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Bibliographic Details
Published in:Optics communications 2006-03, Vol.259 (1), p.256-260
Main Authors: Ng, S.P., Tang, D.Y., Liu, A.Q., Qin, L.J., Meng, X.L.
Format: Article
Language:English
Subjects:
Diode-pumped lasers
Doped-insulator lasers and other solid state lasers
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser optical systems: design and operation
Lasers
Optics
Passive Q-switching
Physics
Q-switching
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Summary:We report on a diode pumped passively Q-switched Nd:Gd0.64Y0.36VO4 laser with a Cr4+:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2ns, peak power of 26.3kW, repetition rate of 15.38kHz have been obtained under an absorbed pump power of 8.54W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.
ISSN:0030-4018
1873-0310
DOI:10.1016/j.optcom.2005.08.056