Mechanism of phase conjugation via stimulated Brillouin scattering in narrow band gap semiconductors

We develop a theoretical model to study optical phase conjugation via stimulated Brillouin scattering (OPC-SBS) in narrow band gap transversely magnetized semiconductors. Threshold value of pump electric field and reflectivity of the image radiation for the onset of OPC-SBS are estimated. The analys...

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Bibliographic Details
Published in:Optics communications 2008-03, Vol.281 (5), p.1251-1255
Main Authors: Singh, M., Aghamkar, P.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
III–V semiconductors
Nonlinear optics
Optical phase conjugation
Optics
Physics
Static magnetic field
Stimulated brillouin and rayleigh scattering
Stimulated Brillouin scattering
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Summary:We develop a theoretical model to study optical phase conjugation via stimulated Brillouin scattering (OPC-SBS) in narrow band gap transversely magnetized semiconductors. Threshold value of pump electric field and reflectivity of the image radiation for the onset of OPC-SBS are estimated. The analysis is applied to both cases viz. centrosymmetric (CS) and non-centrosymmetric (NCS) crystals. Numerical estimates made for n-type InSb crystal at liquid nitrogen temperature duly irradiated by nanosecond pulsed 10.6μm CO2 laser shows that high OPC-SBS reflectivity (90%) can be achieved in NCS crystals at moderate pump electric fields if the crystal is used as an optical waveguide with relatively large interaction length (L=5mm) which proves its potential in practical applications such as fabrication of phase conjugate mirrors.
ISSN:0030-4018
1873-0310
DOI:10.1016/j.optcom.2007.10.102