Ultra-broadband wide-angle terahertz absorber realized by a doped silicon metamaterial

Metamaterial absorber as a functional device has been extensively studied in the past decade, and its performance is continuously improved. Here we present a wide-angle terahertz absorber through polarization-insensitive doped silicon. The structural unit cell consists of a square silicon ring and a...

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Bibliographic Details
Published in:Optics communications 2020-09, Vol.471, p.125835, Article 125835
Main Authors: Jiang, Mingwei, Song, Zhengyong, Liu, Qing Huo
Format: Article
Language:English
Subjects:
Absorber
Doped silicon
Metamaterial
Terahertz
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Summary:Metamaterial absorber as a functional device has been extensively studied in the past decade, and its performance is continuously improved. Here we present a wide-angle terahertz absorber through polarization-insensitive doped silicon. The structural unit cell consists of a square silicon ring and a silicon substrate. Full-wave simulated results show that the designed absorber has excellent performance in the frequency range of 0.7–5.7 THz with the center frequency of 3.2 THz. The relative bandwidth ratio is 156.25% with absorptance greater than 90%. The design is insensitive to polarization at the small incident angle and still shows good performance over a wide range of incident angle. The proposed system may find potential applications in terahertz energy harvesting and thermal emission. •An ultra-broadband absorber is proposed with a simple structure.•The absorber has a large working range of incident angle.•The design works well for TE and TM waves.
ISSN:0030-4018
1873-0310
DOI:10.1016/j.optcom.2020.125835