Self-powered, thermally stable Sb2Se3-based high-performance broadband photodetector

• Published in: Optics and laser technology 2024-02, Vol.169, p.110114, Article 110114
• Main Authors: Vashishtha, Pargam, Dash, Ajit, Kumar, Kapil, Prajapat, Pukhraj, Kumar, Mahesh, Walia, Sumeet, Gupta, Govind
• Format: Article
• Language: English
• Subjects: Broadband; High responsivity; Photodetector; Sb2Se3; Self-powered; Thermally stable
• ISSN: 0030-3992; 1879-2545
• DOI: 10.1016/j.optlastec.2023.110114

•Self-powered and highly responsive broadband (450 nm to 1250 nm) photodetector based on Sb2Se3.•Highest responsivity of 924 mAW−1 (346 mAW−1) for wavelength 1064 nm (532 nm) at Zero applied bias.•High responsivity of 1.5 × 104 mAW−1 (1.3 × 104 mAW−1) & 4.1 × 104 mAW−1 (3.8 × 104 mAW−1) for 532 & 1064 nm at RT (100 °C) at 1 µW. High-performance broadband photodetectors are widely studied due to their unique significance in military and industrial applications. Vander Waals materials-based detector that simultaneously achieves a fast and high response are prerequisites for expanding the current capabilities of the optoelectronic device. Yet the thermal stability of the Vander Waals materials-based broadband (450 nm to 1250 nm) device is rarely addressed. Here, an antimony selenide (Sb2Se3) based photodetector is reported, which reveals high photo-responsivity and detectivity up to 924 mAW−1 (346 mAW−1) and 2.7 × 1010 Jones (1.0 × 1010 Jones) for the illumination wavelength 1064 nm (532 nm) under photovoltaic mode. Moreover, under 0 V-applied bias condition, the developed detector thermal stability was tested, and up to 100 °C devices disclosed a stable behavior. Further, the fabricated Sb2Se3-based broadband device was also tested under photoconductive mode. The photodetector demonstrates high responsivities of 1.5 × 104 mAW−1 (1.3 × 104 mAW−1) and 4.1 × 104 mAW−1 (3.8 × 104 mAW−1) for the illumination wavelength 532 nm and 1064 nm, respectively at room temperature (100 °C) under 0.5 V applied bias condition and 1 µW optical power. The design device can offer ideas for constructing high thermal stability and encouraging such materials in broadband photodetector applications. The state-of-the-art Sb2Se3-based detector can facilitate the translation of solution-processed optoelectronic applications from the laboratory to the marketplace.