Structural and optical properties of p-quaterphenyl thin films and application in organic/inorganic photodiodes

• Published in: Optical materials 2016-12, Vol.62, p.711-716
• Main Authors: Attia, A.A., Saadeldin, M.M., Soliman, H.S., Gadallah, A.-S., Sawaby, K.
• Format: Article
• Language: English
• Subjects: Optical properties; Organic/inorganic photodiode; p-quaterphenyl; Thin film; X-ray diffraction
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2016.10.046

Para-quaterpheny1 (p-4pheny1) thin films were deposited by the thermal evaporation method on glass/quartz substrates for structural and optical investigations. The XRD of p-4phenyl thin films showed that the as-deposited films have a monoclinic structure. The surface morphology of p-4phenyl thin film was studied using scanning electron microscope. The absorption spectrum of p-4phenyl thin film recorded in the wavelength range 200–2500 nm. Photoluminescence measurements revealed two emission peaks at 435 and 444 nm using N2-laser (337.8 nm). The energy gap obtained from the absorption and photoluminescence data was found to be 2.87 and 2.74 eV respectively with Stokes shift value of 0.13 eV. The current-voltage characteristics of p-4phenyl/p-Si heterojunction have been recorded in the dark and under illumination of laser (337.8 nm). Responsivity, Detectivity, External quantum efficiency and Response speed of (Au/p-4pheny1/p-Si/Al) photodetector have been determined using different laser sources at −1 V bias. •Structural properties of p-quaterphenyl thin films.•Absorption spectrum of p-quaterphenyl thin film in the wavelength range 200–2500 nm.•Photoluminescence spectrum of p-quaterphenyl thin film using N2-laser (337.8 nm).•Investigation of J-V Characteristics of Au/p-quaterphenyl/p-Si/Al heterojunction in dark and under illumination.•Investigation of Au/p-quaterphenyl/p-Si/Al photodetector parameters using laser sources.