Compositional dependencies in the vibrational properties of amorphous Ge-As-Se and Ge-Sb-Te chalcogenide alloys studied by Raman spectroscopy

• Published in: Optical materials 2017-11, Vol.73, p.489-496
• Main Authors: Shportko, K., Revutska, L., Paiuk, O., Baran, J., Stronski, A., Gubanova, A., Venger, E.
• Format: Article
• Language: English
• Subjects: Chalcogenides; Compositional trend; Gaussian; Phonon; Raman spectroscopy
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2017.08.042

This work is focused on the compositional dependencies in the Raman spectra of amorphous Ge-As-Se and Ge-Sb-Te chalcogenides with the systematic increase of the Ge-content. Studied Ge-As-Se and Ge-Sb-Te chalcogenides are promising for applications in the photonics, optical, and electronic data storages. Gaussians used to fit the obtained Raman spectra were attributed to the vibrations of the structural units in Ge-Sb-Te and Ge-As-Se samples. Systematic compositional dependencies of the intensities of the characteristic Raman bands correlate with evolution of concentration of the different structural units in Ge-Sb-Te and Ge-As-Se alloys along the studied compositional lines. Obtained compositional trends in the intensities of Raman bands may enable one to predict vibrational properties of other amorphous Ge-Sb-Te and Ge-As-Se chalcogenides. •Raman spectra of amorphous Ge-Sb-Te and Ge-As-Se chalcogenides have been studied.•Gaussian decomposition of obtained spectra has been performed.•Gaussians were attributed to the vibrations of the structural units in Ge-Sb-Te and Ge-As-Se.•Trends in intensities of Raman bands correlate with evolution of concentration of various structural units in studied alloys.•Obtained trends enable one to predict vibrational properties of other amorphous Ge-Sb-Te and Ge-As-Se chalcogenides.