Electrochemical synthesis of MoS2 quantum dots embedded nanostructured porous silicon with enhanced electroluminescence property

In this report we present the successful enhancement in electroluminescence (EL) in nanostructured n-type porous silicon (PS) with an idea of embedding luminophorous Molybdenum disulfide (MoS2) quantum dots (QD's). Electrochemical anodization technique was used for the formation of PS surface a...

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Bibliographic Details
Published in:Optical materials 2017-11, Vol.73, p.763-771
Main Authors: Shrivastava, Megha, Kumari, Reeta, Parra, Mohammad Ramzan, Pandey, Padmini, Siddiqui, Hafsa, Haque, Fozia Z.
Format: Article
Language:English
Subjects:
Electroluminescence
MoS2 quantum dots
Photoluminescence
Porous silicon
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Summary:In this report we present the successful enhancement in electroluminescence (EL) in nanostructured n-type porous silicon (PS) with an idea of embedding luminophorous Molybdenum disulfide (MoS2) quantum dots (QD's). Electrochemical anodization technique was used for the formation of PS surface and MoS2 QD's were prepared using the electrochemical route. Spin coating technique was employed for the proper incorporation of MoS2 QD's within the PS nanostructures. The crystallographic analysis was performed using X-ray diffraction (XRD), Raman and Fourier transform infrared (FT-IR) spectroscopy techniques. However, surface morphology was determined using Transmission electron microscopy (TEM) and Atomic force microscopy (AFM). The optical measurements were performed on photoluminescence (PL) spectrophotometer; additionally for electroluminescence (EL) study special arrangement of instrumental setup was made at laboratory level which provides novelty to this work. A diode prototype was made comprising Ag/MoS2:PS/Silicon/Ag for EL study. The MoS2:PS shows a remarkable concentration dependent enhancement in PL as well as in EL intensities, which paves a way to better utilize this strategy in optoelectronic device applications. •Molybdenum Disulphide (MoS2) Quantum Dots (QDs) embedded in electrochemically anodized porous silicon (PS) nanostructure.•PS:MoS2(0.05%) and PS:MoS2(0.1%) show two times and three times rise in PL intensity.•Electroluminescence (EL) of PS:MoS2(0.05%) show improvement in comparison to pure PS.•Electroluminescence (EL) of PS:MoS2(0.1%) show remarkable enhancement.•Efficient for the application in silicon based light emitting devices.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2017.09.029