Study on the performance of InGaN-based green LED by designing different preparing layers

• Published in: Optical materials 2019-03, Vol.89, p.505-511
• Main Authors: Jiang, Xingan, Zheng, Changda, Mo, Chunlan, Wang, Xiaolan, Zhang, Jianli, Quan, Zhijue, Liu, Junlin, Jiang, Fengyi
• Format: Article
• Language: English
• Subjects: Epitaxial growth; Green LEDs; InGaN; Silicon substrate; Simulation and modelling; V-shape pits
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2019.01.068

In this study, the influence of InGaN/GaN superlattices (SLs) preparing layer and InGaN/GaN blue multiple quantum wells (BMQWs) preparing layer on the performance of InGaN-based green LED on patterned silicon substrate is investigated. Experimental results show that compared to BMQWs, the use of SLs in preparing layer allows us to better improve the crystalline quality of active region, trigger the formation and enlargement of V-shape pits at dislocations as well as to facilitate the vertical carrier injection and promote lateral current distribution, which in general leads to the reduced leakage currents, lower operating voltages and enhanced quantum efficiency/wall-plug efficiency. •Investigation on the performance of InGaN-based green LED by designing InGaN/GaN superlattices (SLs) and InGaN/GaN blue multiple quantum wells (BMQWs).•Indium clusters, V-shape pits, leakage currents, lateral current distribution and vertical carrier injection are investigated.•The use of SLs in preparing layer allows us to better reduce leakage currents, lower operating voltages and enhance luminous efficiency.