Development and characterization of TlGaSe2 thin film-based photodetector for visible-light photodetector applications

• Published in: Optical materials 2020-05, Vol.103, p.109834, Article 109834
• Main Authors: Ashraf, I.M., Shkir, Mohd, AlFaify, S., Abdel-Wahab, F., Ali, Atif M., Sebak, M.A., Al-Juman, M.S. Awad, Sanaa, M.F.
• Format: Article
• Language: English
• Subjects: A. Thin film; B. thermal evaporation; C. X-ray diffraction; D. electrical properties; D. optical properties; D. photodetector
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2020.109834

In current work a thermal evaporation technique has been employed to fabricate the thin films from the grown TlGaSe2 single crystal and investigated. X-ray diffraction study revealed the formation of polycrystalline films of monoclinic crystal system. The crystallite size was estimated to be 11 nm. Atomic force and scanning electron microscopy studies shows the nanocrystalline film fabrication and the size of grain was estimated. Optical study shows that the grown film is about 55% transparent in 800–1500 nm region and possess a sharp absorption edge. The direct energy gap of TlGaSe2 films was estimated around 2.31 eV. The photo current of the fabricated TlGaSe2 photodetector increases about 6 times compare to dark when exposed under 5 mW/cm2 illumination. The fabricated detector possesses high external quantum efficiency of 158% and also the detectivity reached to 5.16 × 1010 at V = 10 V. The on/off behaviour of the device was also studied and found that the response time for growth and decay is 88 ms and 90 ms, respectively. •Fabrication of TlGaSe2 thin film was carried out by thermal evaporation.•Structural study confirms the formation of polycrystalline films of TlGaSe2.•The direct energy gap of TlGaSe2 films was estimated around 2.31 eV.•The photocurrent of TlGaSe2 photodetector increases about 6 times.•The specific detectivity reached to 5.16 × 1010 at V = 10 V.