Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light

Nonradiative recombination (NRR) processes through defect states and their temperature dependence in UV-B AlGaN MQW sample on sapphire substrate grown by MOCVD technique have been studied by photoluminescence (PL) spectroscopy. We detected NRR centers by adding a below-gap excitation light with phot...

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Bibliographic Details
Published in:Optical materials 2020-07, Vol.105, p.109878, Article 109878
Main Authors: Hossain, M. Ismail, Itokazu, Yuri, Kuwaba, Shunsuke, Kamata, Norihiko, Hirayama, Hideki
Format: Article
Language:English
Subjects:
AlGaN
Nonradiative recombination center
Quantum well
Recombination model
Two-wavelength excited photoluminescence
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Summary:Nonradiative recombination (NRR) processes through defect states and their temperature dependence in UV-B AlGaN MQW sample on sapphire substrate grown by MOCVD technique have been studied by photoluminescence (PL) spectroscopy. We detected NRR centers by adding a below-gap excitation light with photon energies from 0.93 eV to 1.46 eV on an above-gap excitation light of 4.66 eV. All the BGE energies decreased PL intensity at 25 K, and the most-distinct quenching is observed by 1.27 eV BGE at the same BGE photon number density. The temperature-dependent PL intensity for the BGE energy of 1.27 eV is interpreted by three NRR centers. The one-level model dominates over that of two-level model in the temperature range 58 K 
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2020.109878