Growth and characterization of Si-doped β-Ga2O3 films by pulsed laser deposition

• Published in: Optical materials 2020-10, Vol.108, p.110145, Article 110145
• Main Authors: Xu, C.X., Liu, H., Pan, X.H., Ye, Z.Z.
• Format: Article
• Language: English
• Subjects: Epitaxial growth; Physical vapor deposition; Structural; Thin films
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2020.110145

(2‾01) oriented Si-doped β-Ga2O3 films were grown on (0001) sapphire substrates with different SiO2 content in the targets by pulsed laser deposition (PLD). A carrier density of 8.3 × 1018 cm−3 and a Hall mobility of 0.07 cm2 V−1s−1 have been observed for film grown with 1.5 wt % SiO2 content in the target. Optical transmission spectra show that all the films have high visible region transmittance. Our work shows that PLD is an effective technique for growing conductive Si-doped β-Ga2O3 films. •Si-doped β-Ga2O3 films were grown on sapphire substrates.•The optical and electrical performances of Si-doped β-Ga2O3 films are investigated.•Si-doped β-Ga2O3 film shows a carrier density of 1018 cm−3 and a Hall mobility of 0.07 cm2 V−1s−1.•Pulsed laser deposition is an effective technique for growing Si-doped β-Ga2O3 films.