A novel van der Waals semiconductor: InTeI crystal

van der Waals materials have attracted much scientific and technological interest recently. In this study, We synthetized a novel van der Waals brown semitransparent semiconductor: InTeI single crystal, and characterized its structure and optical properties carefully. Single crystal diffraction resu...

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Bibliographic Details
Published in:Optical materials 2021-09, Vol.119, p.111331, Article 111331
Main Authors: Zhou, Xuan, Ruan, Yinjie, Yin, Handi, Sun, Yue, Lv, Bin, Cheng, Guofeng
Format: Article
Language:English
Subjects:
Band gap
InTeI
Photocurrent
Van der waals semiconductor
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Summary:van der Waals materials have attracted much scientific and technological interest recently. In this study, We synthetized a novel van der Waals brown semitransparent semiconductor: InTeI single crystal, and characterized its structure and optical properties carefully. Single crystal diffraction results show a layered structure with the P21/c space group and 4.09 Å interlayer distance at room temperature. UV–visible absorption and photoluminescence spectra reveal that the band gap of InTeI is ~2.219 eV. The photocurrents under an illumination wavelength of 500 nm and non-illuminated conditions indicate its potential applicability in the photovoltaic field. Our work may be benefit for the understanding of its practical applications in field emission devices and photodectors. •This manuscript reports a novel van der Waals semiconductor: InTeI crystal.•UV–visible absorption and photoluminescence spectra revealed that the band gap of InTeI is ~2.219 eV.•The photocurrents under illumination and non-illuminated conditions indicate its potential photovoltaics applicability.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2021.111331