Analysis of opto-electrical, trap complexity and defect density in Cu–Zn–Ge–S/Se kesterite thin-film solar cell

• Published in: Optical materials 2022-11, Vol.133, p.112975, Article 112975
• Main Authors: A., Benisha Chris, Routray, Soumyaranjan, Massoud, Yehia
• Format: Article
• Language: English
• Subjects: CZGS; CZGSe; Defects; Kesterite; Quantum efficiency; Traps
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2022.112975

Kesterite photovoltaic have received a lot of attention for its cheap cost and high efficiency. But, their performance efficiency is less than 12%. Its performances are restricted by the formation of defects that reduce short-circuit current by creating deep traps which undergo recombination. An approach, replacing Sn with Ge as Cu–Zn–Ge–S/Se (CZGS)/(CZGSe) kesterite solar cell is investigated to reduce defect development. In this article, various loss mechanisms that impact on the performance of CZGS/Se solar cells are investigated and compared. The impact of electrical, optical and various loss strategies such as radiative and non radiative recombination is investigated in depth. Additionally, trap and defect state densities are also propagated to the absorber layer. In the presence of defect states, the efficiency of the kesterite solar cell is significantly damaged and degraded about 11%. •Investigation towards replacement of Sn to Ge as CZGS/Se in kesterite solar cell.•Performance analysis of opto-electrical and loss mechanisms in CZGS/Se is explored.•Proposed structure shows 16% efficiency for CZGS and 19% efficiency for CZGSe.•Novel approach to determine the presence of defect states in CZGS/Se material.•In defective states, its efficiency is 11% for CZGS and 12% for CZGSe.