Loading…

An experimental study: Dependence of Schottky diode parameters on Schottky contact area size

We have investigated whether the Schottky barrier diodes (SBD) parameters such as the SB height and ideality factor (IF) change as a function of Schottky contact (SC) area, in the Pt/n-Si (D1Pt) and PtSi/n-Si (D2PtSi). The SC area ranges from 1.000x10−4 cm2 to 1.600x10−3 cm2. The results of this kin...

Full description

Saved in:
Bibliographic Details
Published in:Optical materials 2023-08, Vol.142, p.114038, Article 114038
Main Authors: Efeoǧlu, Hasan, Turut, Abdulmecit, Gül, Melik
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have investigated whether the Schottky barrier diodes (SBD) parameters such as the SB height and ideality factor (IF) change as a function of Schottky contact (SC) area, in the Pt/n-Si (D1Pt) and PtSi/n-Si (D2PtSi). The SC area ranges from 1.000x10−4 cm2 to 1.600x10−3 cm2. The results of this kind of study can help selection of SC dimensions suitable for many purposes in temperature, pressure and atmospheric gas composition sensors, and switching power, high-power, high-temperature and high-frequency devices. The IF and SB height values from the forward bias I–V curves at 296 K have ranged from 1.036 0.7716 eV for 1.00x10−4 cm2 to 1.013 and 0.7819 eV for 1.60x10−3 cm2 in the D1Pt diodes, respectively and from 1.073 and 0.8619 eV for 1.00x10−4 cm2 to 1.020 and 0.8897 eV for 1.60x10−3 cm2 in D2PtSi diodes, respectively. Thus, it has been seen that the SB height value has raised while the IF value has decreased with an increase in the SC area size. It has been concluded in literature that the increase in the SC diameter reveals decreasing periphery effect and absolute value of the built in electric field. [Display omitted] •Dependence of Schottky diode parameters on the Schottky contact area size.•The SB diodes are of two types, Pt/epitaxy n-Si/n+Si and PtSi/epitaxy n-Si/n + Si.•Thirteen diodes with different SC area size were prepared under the same conditions.•The diodes were simultaneously made on the same Si wafer at the same time.•Barrier height and ideality factor values have been from forward bias IV curves.•The SB height value has raised while ideality factor value has decreased with increasing contact area size.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2023.114038