Growth and characterization of Fe-doped CuO/ZnO binary oxide thin films for possible optoelectronic applications

Nanoscale binary oxide thin film structures of pristine and Fe-substituted CuO/ZnO have been produced on soda-lime glass substrates by the SILAR method and characterized by different acceptable analytical approaches. The more irregular and lumpy ZnO in the pristine CuO/ZnO binary thin film sample ev...

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Bibliographic Details
Published in:Optical materials 2024-06, Vol.152, p.115557, Article 115557
Main Authors: Soğan, Serra, Yücel, Ersin, Sarıkaya, Ebru Karakaş, Kahveci, Osman, Aydın, Raşit, Akkaya, Abdullah, Şahin, Bünyamin
Format: Article
Language:English
Subjects:
Bandgap
Binary oxides
Composite film
Fe-doping
Resistivity
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Summary:Nanoscale binary oxide thin film structures of pristine and Fe-substituted CuO/ZnO have been produced on soda-lime glass substrates by the SILAR method and characterized by different acceptable analytical approaches. The more irregular and lumpy ZnO in the pristine CuO/ZnO binary thin film sample evolved into more regular and hexagonal prismatic structures with the addition of Fe. XRD patterns of the samples indicated that both monoclinic CuO and hexagonal ZnO phases were present without any impurities. Optical analyses by meaning absorbance and transmittance measurements exhibit an important change in the energy band gap and transmittance value with the Fe doping ratio. The energy band edges of the bare sample shift to red with increasing Fe percentage in the starting solution, presumably due to an increase in the carrier concentration. The transfer length method (TLM) is used to define the conductivity properties of the samples, which considers the contact properties and structural features of thin films. The minimum specific contact resistivity of 0.865 × 106 Ω□ was obtained by 3.0 % Fe-implemented CuO/ZnO binary oxide samples, and the addition of Fe increased the effective transfer length of thin films. •Fe-doped CuO/ZnO binary oxide thin films were synthesized by SILAR method.•CuO/ZnO thin films are intense and uniform without evident pores and cracks.•Optical analysis exhibited a decrease in absorbance and transmittance with Fe-doping.•The specific contact resistivity of CuO/ZnO is as low as of 0.865 × 106 Ω□ when the Fe content is 3.0 %.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2024.115557