Self-biased photoelectrochemical photodetector based on liquid phase exfoliated SnSe nanosheets

• Published in: Optical materials 2024-11, Vol.157, p.116172, Article 116172
• Main Authors: Gohil, Jagrutiba D., Bhakhar, Sanjay A., Patel, Megha, Jagani, Hiren Shantilal, Pathak, V.M.
• Format: Article
• Language: English
• Subjects: 2D SnSe; Liquid phase exfoliation; Photodetector; Photoelectrochemical (PEC); XRD
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2024.116172

The present article involves a liquid phase exfoliation technique to synthesize SnSe nanosheets. These nanosheets are deposited on an ITO glass substrate to make a thin film via an electrophoretic deposition (EPD) technique. Through the use of energy-dispersive X-ray analysis (EDAX), the cleanliness and chemical compositions of the film are examined. The surface topography of the deposited film is carried out by scanning electron microscopy (SEM). The orthorhombic crystal structure of SnSe thin film is verified by X-ray diffraction (XRD) analysis. The optical gap energy and absorbance profiles also exhibit a morphology-dependent response, as measured by ultraviolet–visible (UV–vis) spectroscopy. The Photoresponse performance of SnSe thin film-based PEC-type photodetector was carried out under illumination of poly and monochromatic wavelengths. SnSe nanosheet-based photodetector showed a maximum photocurrent of 14.50 μA under polychromatic light of intensity 100 mW/cm2, at zero bias. This study demonstrates how the Requirement for TMC semiconductors in optoelectronic devices increases due to their exceptional photoresponse performance. •SnSe nanosheets were successfully produced via DVT, liquid phase exfoliation, and electrophoretic deposition.•Characterization revealed an orthorhombic lattice structure with controlled lateral widths, indicating potential in electronics and optoelectronics.•At zero bias, SnSe nanosheet-based electrodes demonstrated a peak photocurrent of 14.50 μA under polychromatic light (100 mW/cm2).•The PEC photodetector had an IPCE of 38.28 % and a photoresponsivity of 145 mA/W, indicating fast photo-switching capability for photodetection applications.