Experimental production and investigations of a new Cu–Al–Fe Schottky diode

• Published in: Optical materials 2025-01, Vol.158, p.116498, Article 116498
• Main Authors: Aldirmaz, E., Güler, M., Güler, E.
• Format: Article
• Language: English
• Subjects: F–V measurements; Responsivity; Schottky diode; Transient photocurrent
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2024.116498

The structural, electrical, and photoconductivity features of a metal-semiconductor diode were investigated in this work. A new diode with a Cu–Al–Fe/p-Si/Al structure was produced by coating a Cu–Al–Fe-shaped memory alloy film on p-Si. The microstructural and thermal characteristics of this produced diode were analyzed with scanning electron microscopy (SEM) and differential scanning calorimetry (DSC) where the electrical performance was clarified from Current-Voltage (I–V), Capacity-Voltage (C–V), Conductivity-Voltage (G-V), Capacity-time (C-t), and Current-time (I-t) measurements. In addition, the diode's light sensitivity and photo response properties were analyzed. Due to its structural and electrical properties, the generated diode can be used in optoelectronic applications as a photodiode or optical sensor. •A Schottky device was developed utilizing a CuAlFe shape memory alloy.•The prepared shape memory alloy was then characterized by using SEM and DSC techniques.•This work primarily addresses the impacts of voltage, varying frequencies, and different levels of light intensity.•The produced Schottky diode can be used optical circuit element applications.