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Low switching voltage, high-stability organic phototransistor memory based on a photoactive dielectric and an electron trapping layer
An organic phototransistor memory is presented with a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (CYTOP). The dielectric gate...
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Published in: | Organic electronics 2020-02, Vol.77, p.105505, Article 105505 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | An organic phototransistor memory is presented with a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (CYTOP). The dielectric gate layer functioned as an insulator in the dark and as a charge generator and/or conductive layer under photoirradiation, which resulted in a low program voltage and an operation with long-term stability. A shift in the phototransistor threshold voltage could be reversibly tuned from −5.8 to 6.2 V with a low switching voltage (≤8 V) under UV irradiation. Programmed/erased states were obtained by applying gate pulse voltages of −8/5 V under UV irradiation from an external light source. The phototransistor memory exhibited high stability with a large on/off current ratio of ~105 for a retention time up to 2 × 106 s with a reliability greater than 103 programming/erasing testing cycles. These findings introduce a new approach for organic phototransistor non-volatile memory with high stability.
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•A low switching voltage, highly stable organic phototransistor memory was fabricated.•The gate dielectric functions as a charge source or conductor under UV light and an insulator under dark.•The memory effect originates from trapping and detrapping electrons at an interface of CYTOP/DPA−CM:PMMA.•The memory device exhibits an on/off ratio up to ~105 at retention time of 2 × 106 s. |
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ISSN: | 1566-1199 1878-5530 |
DOI: | 10.1016/j.orgel.2019.105505 |