Effect of interfacial interaction on spin polarization at organic-cobalt interface

• Published in: Organic electronics 2020-03, Vol.78, p.105567, Article 105567
• Main Authors: Liu, Baoxing, Xie, Haipeng, Niu, Dongmei, Wang, Shitan, Zhao, Yuan, Liu, Yuquan, Lyu, Lu, Gao, Yongli
• Format: Article
• Language: English
• Subjects: Cobalt; Interfacial interaction; Organic semiconductor; Spin-resolved photoemission spectroscopy
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2019.105567

The interface between organic semiconductors and Co thin film has been studied by spin-resolved photoemission spectroscopy. We found that the spin-polarized states of cobalt still exist when 1.0 nm rubrene or 0.7 nm C60 or 1.0 nm DBBA molecules deposited on Co, while 0.4 nm C8-BTBT eliminates the highly spin-polarized states of cobalt due to the desulfurization reaction occurred at the interface. The mode and strength of the interfacial interaction between organic semiconductors and magnetic electrode affect the spin-polarized states of magnetic electrode greatly. Our observations provide assistance in device design, fabrication and performance improvement in Co-based organic spintronic devices. [Display omitted] •The spin-polarized state of the magnetic electrode is related to the mode and strength of the interfacial interaction.•The spin-polarized states of cobalt still exist after deposition of rubrene, C60 or DBBA due to the weak hybridization.•C8-BTBT eliminates the spin-polarized states of cobalt due to the desulfurization reaction occurred at the interface.