Photomultiplication-type perovskite photodetectors base on air-processed perovskite films

• Published in: Organic electronics 2023-07, Vol.118, p.106800, Article 106800
• Main Authors: Tao, Sizhe, Yang, Dezhi, He, Guo, Guo, Dechao, Yang, Liqing, Zheng, Jingbo, Li, Ji, Chen, Jiangshan, Ma, Dongge
• Format: Article
• Language: English
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2023.106800

Perovskites have shown potential applications in low-cost and high-performance optoelectronic devices because of their solution processability and inherent outstanding optoelectronic properties. Among them, perovskite photodetectors have been the focus of scientific researches. Here, a photomultiplication-type perovskite photodetector is successfully fabricated with the high-quality perovskite films by spinning-bathing-spinning method in ambient air, which overcomes the stringent environmental requirement of the preparation of perovskite films. The photomultiplication photoconductive gain is realized by the traps-enhanced hole injection by capturing photogenerated electrons. The deep trap states provided by MoO3 capture the generated electrons in active layer, which causes the interfacial trap-assisted hole-tunneling injection, thus forming the gain. Consequently, the photomultiplication-type perovskite photodetector achieves a high external quantum efficiency over 52800% and exhibits a fast photoresponse time about 18.5 μs. The high performance photomultiplication-type perovskite photodetector with the high-quality perovskite film by spinning-bathing-spinning method in ambient air was successfully fabricated by the design of device structure. [Display omitted] •A photomultiplication-type perovskite photodetector with the air-processed high-quality perovskite film was achieved.•The fabrication method overcame the stringent environmental requirement of the preparation of perovskite films.•By introducing MoO3 as the deep level traps, the photomultiplication effect was achieved.•The EQE of the photomultiplication-type perovskite photodetector was up to 52897% at 330 nm under −4 V.