Progress in Development of Monolithic Active Pixel Detector for X-ray Astronomy with SOI CMOS Technology

We have been developing an active pixel sensor for X-ray astronomy. In this paper, we report on the design and the characterizationof the recently-developed device named XRPIX1-FZ.We applied the high-resistivitySiwafer(∼7 kΩ cm) to the sensor layer for a thick depletion layer. The chemical-mechanica...

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Bibliographic Details
Published in:Physics procedia 2012, Vol.37, p.1373-1380
Main Authors: Nakashima, Shinya, Ryu, Syukyo Gando, Tsuru, Takeshi Go, Takeda, Ayaki, Arai, Yasuo, Miyoshi, Toshinobu, Ichimiya, Ryo, Ikemoto, Yukiko, Imamura, Toshifumi, Ohmoto, Takafumi, Iwata, Atsushi
Format: Article
Language:English
Subjects:
pixel
SOI
X-ray imaging
X-ray spectroscopy
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Summary:We have been developing an active pixel sensor for X-ray astronomy. In this paper, we report on the design and the characterizationof the recently-developed device named XRPIX1-FZ.We applied the high-resistivitySiwafer(∼7 kΩ cm) to the sensor layer for a thick depletion layer. The chemical-mechanical polishing, which we applied to smooth the rough backside of the Si wafer, successfully reduced the dark current. We used the single-pixel readout mode and achievedthe energy resolution of 260eVinFWHMat8keV.Moreover, we developed the 3 × 3pixel readout mode for the evaluation of split events and confirmed the full depletion of 250μm thick at thereverse-biasvoltageof30V
ISSN:1875-3892
1875-3892
DOI:10.1016/j.phpro.2012.04.100