Exciton Photoluminescence of ZnO Thin Films Grown by ALD-Technique

The low-temperature exciton photoluminescence of thin ZnO films grown by atomic layer deposition (ALD) on (100) and (111) Si substrates under He-Cd (λ = 325nm) and N2 (λ = 337nm) laser excitation is studied. The structure of the films is analyzed by XRD and SEM methods. The effects of excitation int...

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Bibliographic Details
Main Authors: Labzowskaya, M.E., Akopyan, I.Kh, Novikov, B.V., Serov, A.E., Filosofov, N.G., Basov, L.L., Drozd, V.E., Lisachenko, A.A.
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition method
localized exitons
photoluminescence
surface states
ZnO thin films
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Summary:The low-temperature exciton photoluminescence of thin ZnO films grown by atomic layer deposition (ALD) on (100) and (111) Si substrates under He-Cd (λ = 325nm) and N2 (λ = 337nm) laser excitation is studied. The structure of the films is analyzed by XRD and SEM methods. The effects of excitation intensity and laser irradiation on the photoluminescence spectra are investigated. A wide asymmetric emission band attributed to excitons localized in the near surface potential fluctuations has been observed in photoluminescence spectra of the film and powder samples.
ISSN:1875-3892
1875-3892
DOI:10.1016/j.phpro.2015.10.007