Magnetization profile at the Fe/GaAs(0 0 1)-4×6 interface

The magnetization of a thin Fe film epitaxially grown on GaAs(0 0 1)-4×6 was studied at different depths from the metal/semiconductor interface using a single layer of Fe 0.5Co 0.5 as a marker layer through a double-wedge Fe film. By measuring the X-ray magnetic circular dichroism spectroscopy at th...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2004-03, Vol.345 (1), p.177-180
Main Authors: Giovanelli, L., Tian, C.-S., Gastelois, P.L., Panaccione, G., Fabrizioli, M., Hochstrasser, M., Galaktionov, M., Back, C.H., Rossi, G.
Format: Article
Language:English
Subjects:
GaAs
Spin injection
X-ray magnetic circular dichroism
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Summary:The magnetization of a thin Fe film epitaxially grown on GaAs(0 0 1)-4×6 was studied at different depths from the metal/semiconductor interface using a single layer of Fe 0.5Co 0.5 as a marker layer through a double-wedge Fe film. By measuring the X-ray magnetic circular dichroism spectroscopy at the L 2,3 of Co, the magnetic response of the film could be sensed at different distances from the interface. Data show a reduction of the magnetization at the interface though the existence of a magnetically “dead” layer is completely ruled out. Moreover, the magnetization was found to be reduced at the Fe film surface.
ISSN:0921-4526
DOI:10.1016/j.physb.2003.11.048