Carrier recombination in tailored multilayer Si/Si1−xGex nanostructures

Photoluminescence (PL) measurements were performed in Si/Si1−xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2014-11, Vol.453, p.29-33
Main Authors: Mala, S.A., Tsybeskov, L., Lockwood, D.J., Wu, X., Baribeau, J.-M.
Format: Article
Language:English
Subjects:
Carrier recombination
Cluster multilayers
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Photoluminescence
Physics
Si/SiGe nanostructures
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Summary:Photoluminescence (PL) measurements were performed in Si/Si1−xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si0.6Ge0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2014.03.084