Hydrogen-related defects in Al 2 O 3 layers grown on n -type Si by the atomic layer deposition technique

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2018-04, Vol.535, p.171-174
Main Authors: Kolkovsky, Vl, Stübner, R.
Format: Article
Language:English
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ISSN:0921-4526
DOI:10.1016/j.physb.2017.07.028