Electron tunneling through HgTe/CdTe quantum wells with all-electrical superlattice structures

• Published in: Physica. B, Condensed matter Condensed matter, 2022-12, Vol.646, p.414344, Article 414344
• Main Authors: Lin, Liangzhong, Zhan, Guohui, Ling, Yiyun, Lou, Wenkai, Wu, Zhenhua
• Format: Article
• Language: English
• Subjects: Electrical potential modulations; Fabry–Pérot resonance; HgTe/CdTe quantum wells; Rashba spin–orbit interaction; Superlattice structures
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2022.414344

We theoretical investigate the electron transport through HgTe/CdTe quantum wells (QWs) heterostructure interfaces with periodic electrical potential modulations in this work. We find Fabry–Pérot resonant tunneling with perfect transmission through a two dimensional topological insulator superlattice structure in HgTe/CdTe QWs, which is supposed to be experimentally observable. This unique feature indicates potential applications of Fabry–Pérot interferometers device. The transport properties of electrons tunneling through the superlattice structures can be adjusted by tuning the Fermi energy, electron incident angle, the electrical modulation numbers and modulation amplitude. We also find the enhanced Fabry–Pérot resonance tunneling due to the electric-induced Rashba spin–orbit interaction (RSOI). This all-electrical mechanism may pave a realistic way to control the electron transport in two dimension topological insulator from a device application perspective. •We find Fabry-Pérot resonant tunneling with perfect transmission through a two dimensional topological insulator superlattice structure in HgTe/CdTe QWs, which is supposed to be experimentally observable.•This unique feature indicates potential applications of Fabry-Perot interferometers device.•We also find the enhanced Fabry-Perot resonance tunneling due to the electric-induced Rashba spin-orbit interaction (RSOI).•This all-electrical mechanism may pave a realistic way to control the electron transport in two dimension topological insulator from a device application perspective.